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BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD543 Series 70 W at 25C Case Temperature 8 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD544 Collector-base voltage (IE = 0) BD544A BD544B BD544C BD544 Collector-emitter voltage (IB = 0) BD544A BD544B BD544C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%. 2. Derate linearly to 150C case temperature at the rate of 0.56 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 mW/C. VEBO IC ICM Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -8 -10 70 2 -65 to +150 -65 to +150 -65 to +150 260 V A A W W C C C C V V UNIT JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD544 V(BR)CEO IC = -30 mA (see Note 4) VCE = -40 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -60 V VCE = -80 V VCE = -100 V ICEO IEBO VCE = -30 V VCE = -60 V VEB = VCE = VCE = VCE = IB = IB = IB = VCE = -5 V -4 V -4 V -4 V -0.3 A -1 A -1.6 A -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = IC = IC = IC = IC = -1 A -3 A -5 A -3 A -5 A - 8A -5 A (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 (see Notes 4 and 5) (see Notes 4 and 5) 60 40 15 -0.5 -0.5 -1 -1.4 V V IB = 0 BD544A BD544B BD544C BD544 BD544A BD544B BD544C BD544/544A BD544B/544C MIN -40 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 mA mA mA V TYP MAX UNIT hFE V CE(sat) VBE hfe VCE = -10 V VCE = -10 V IC = -0.5 A IC = -0.5 A |hfe | NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.79 62.5 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = -6 A VBE(off) = 4 V IB(on) = -0.6 A RL = 5 MIN IB(off) = 0.6 A tp = 20 s, dc 2% TYP 0.4 0.7 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = -4 V TC = 25C tp = 300 s, duty cycle < 2% VCE(sat) - Collector-Emitter Saturation Voltage - V 1000 TCS634AI COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT -10 TCS634AE IC = -300 mA IC = -1 A IC = -3 A IC = -6 A -1*0 hFE - DC Current Gain 100 10 -0*1 1*0 -0*1 -1*0 IC - Collector Current - A -10 -0*01 -0*001 -0*01 -0*1 IB - Base Current - A -1*0 -10 Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1*2 VCE = -4 V TC = 25C VBE - Base-Emitter Voltage - V -1*1 TCS634AF -1*0 -0*9 -0*8 -0*7 -0*6 -0*1 -1*0 IC - Collector Current - A -10 Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -10 SAS634AF IC - Collector Current - A -1*0 -0*1 -0*01 -1*0 BD544 BD544A BD544B BD544C -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C TIS633AD Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD544, BD544A, BD544B, BD544C PNP SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 3,96 3,71 10,4 10,0 2,95 2,54 6,6 6,0 15,90 14,55 1,32 1,23 see Note B see Note C 6,1 3,5 0,97 0,61 1 2 3 1,70 1,07 14,1 12,7 2,74 2,34 5,28 4,88 2,90 2,40 0,64 0,41 VERSION 1 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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